Differentiated LaYout Styles for MOSFETs: Electrical Behavior in Harsh Environments

Differentiated LaYout Styles for MOSFETs: Electrical Behavior in Harsh Environments - Nyomtatható verzió

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RE: Differentiated LaYout Styles for MOSFETs: Electrical Behavior in Harsh Environments - 0dayddl - 2023-05-18

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Description:

Idézet:This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.

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Idézet:A kódrészlet megtekintéséhez be kell jelentkezned, vagy nincs jogosultságod a tartalom megtekintéséhez.